N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460PBF
- RS-stocknr.:
- 540-9654
- Fabrikantnummer:
- IRFP460PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 2,34
(excl. BTW)
€ 2,83
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 2,34 |
| 5 - 19 | € 2,23 |
| 20 - 49 | € 2,11 |
| 50 - 99 | € 2,00 |
| 100 + | € 1,87 |
*prijsindicatie
- RS-stocknr.:
- 540-9654
- Fabrikantnummer:
- IRFP460PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 270 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 280 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 210 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 5.31mm | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 280 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 210 nC @ 10 V | ||
Transistor Material Si | ||
Width 5.31mm | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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