MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18836 Producten voor MOSFETs

    onsemi
    P
    2.6 A
    12 V
    40 mΩ
    SOT-23
    PowerTrench
    -
    Surface Mount
    0.4V
    3
    -8 V, +8 V
    Enhancement
    500 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    12 nC @ 4.5 V
    1.4mm
    Infineon
    N
    17 A
    100 V
    90 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    70 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    37 nC @ 10 V
    9.65mm
    Toshiba
    P
    6 A
    12 V
    2.63e+007 Ω
    SOT-23
    -
    1V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Vishay
    N
    9.9 A
    200 V
    180 mΩ
    TO-220FP
    -
    -
    Through Hole
    1V
    3
    -10 V, +10 V
    Enhancement
    40 W
    -
    Single
    -
    +150 °C
    1
    Si
    66 nC @ 10 V
    -
    € 2,136
    Per stuk (in een verpakking 5)
    Vishay
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DiodesZetex
    N, P
    4.1 A, 4.98 A
    30 V
    60 mΩ, 80 mΩ
    SOIC
    -
    3V
    Surface Mount
    -
    8
    -20 V, +20 V
    Enhancement
    1.35 W
    -
    Full Bridge
    5mm
    +150 °C
    4
    Si
    9 nC @ 10 V
    4mm
    Nexperia
    N
    20 A
    55 V
    75 mΩ
    TO-220AB
    -
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    62 W
    -
    Single
    10.3mm
    +175 °C
    1
    Si
    11 nC @ 10 V
    4.7mm
    onsemi
    N
    222 A
    100 V
    2.3 mΩ
    TO-220
    -
    4V
    Through Hole
    2V
    3
    ±20 V
    Enhancement
    214 W
    -
    Single
    10.36mm
    +175 °C
    1
    -
    108 nC @ 10 V
    4.67mm
    Vishay
    N
    9.9 A
    200 V
    180 mΩ
    TO-220FP
    -
    -
    Through Hole
    1V
    3
    -10 V, +10 V
    Enhancement
    40 W
    -
    Single
    -
    +150 °C
    1
    Si
    66 nC @ 10 V
    -
    STMicroelectronics
    N
    120 A
    75 V
    3.7 mΩ
    D2PAK (TO-263)
    STripFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    330 W
    -
    Single
    10.75mm
    +175 °C
    1
    Si
    85 nC @ 10 V
    10.4mm
    onsemi
    P
    30 A
    60 V
    26 mΩ
    TO-220F
    QFET
    -
    Through Hole
    2V
    3
    -25 V, +25 V
    Enhancement
    62 W
    -
    Single
    10.16mm
    +175 °C
    1
    Si
    84 nC @ 10 V
    4.7mm
    Infineon
    P
    70 A
    55 V
    20 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    170 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    120 nC @ 10 V
    9.65mm
    onsemi
    N
    75 A
    55 V
    8 mΩ
    TO-220AB
    UltraFET
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    285 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    175 nC @ 20 V
    4.7mm
    STMicroelectronics
    N
    80 A
    55 V
    7 mΩ
    D2PAK (TO-263)
    STripFET II
    -
    Surface Mount
    1V
    3
    -16 V, +16 V
    Enhancement
    300 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    100 nC @ 5 V
    9.35mm
    STMicroelectronics
    N
    2.5 A
    1500 V
    9 Ω
    TO-220
    MDmesh
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    140 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    29.3 nC @ 10 V
    4.6mm
    Infineon
    P
    70 A
    30 V
    -
    PG-TO252
    -
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    N
    100 A
    80 V
    6.3 mΩ
    TO-220
    OptiMOS™ 3
    3.5V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    214 W
    -
    Single
    10.36mm
    +175 °C
    1
    Si
    88 nC @ 10 V
    4.57mm
    STMicroelectronics
    N
    62 A
    33 V
    15 mΩ
    TO-220
    STripFET
    4V
    Through Hole
    2V
    3
    -
    Enhancement
    110 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    34 nC @ 10 V
    4.6mm
    Infineon
    P
    31 A
    55 V
    60 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    110 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    63 nC @ 10 V
    4.69mm
    Infineon
    N
    36 A
    100 V
    44 mΩ
    TO-220AB
    HEXFET
    2V
    Through Hole
    1V
    3
    -16 V, +16 V
    Enhancement
    140 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    74 nC @ 5 V
    4.69mm
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