MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18836 Producten voor MOSFETs

    Infineon
    N
    2 A
    800 V
    2.7 Ω
    DPAK (TO-252)
    CoolMOS™
    3.9V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    343 A
    40 V
    2 mΩ
    TO-220AB
    HEXFET
    2.5V
    Through Hole
    1V
    3
    -20 V, +20 V
    Enhancement
    375 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    108 nC @ 4.5 V
    4.83mm
    onsemi
    P
    2.4 A
    20 V
    55 mΩ
    SOT-23
    PowerTrench
    -
    Surface Mount
    0.6V
    3
    -12 V, +12 V
    Enhancement
    500 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    9 nC @ 4.5 V
    1.4mm
    Infineon
    N
    80 A
    55 V
    7 mO
    TO-220
    -
    2V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    166 A
    100 V
    0.0027 Ω
    D2PAK (TO-263)
    OptiMOS™ 5
    3.8V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    onsemi
    N
    18 A
    500 V
    265 mΩ
    TO-220F
    UniFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    38.5 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    45 nC @ 10 V
    4.7mm
    IXYS
    N
    2 A
    650 V
    2.3 Ω
    TO-220
    X2-Class
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    55 W
    -
    Single
    10.3mm
    +150 °C
    1
    Si
    4.3 nC @ 10 V
    15.9mm
    € 0,564
    Per stuk (in een verpakking 5)
    Vishay
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    DiodesZetex
    N
    4 A
    20 V
    85 mΩ
    SOT-23
    DMN2056U
    1V
    Surface Mount
    0.4V
    3
    -8 V, +8 V
    Enhancement
    940 mW
    -
    Single
    3mm
    +150 °C
    1
    -
    4.3 nC @ 10 V
    1.4mm
    DiodesZetex
    N
    500 mA
    50 V
    2 Ω
    SOT-23
    -
    1.5V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    920 mW
    -
    Single
    3mm
    +150 °C
    1
    Si
    0.8 nC @ 10 V
    1.4mm
    Vishay
    Dual N
    8 A
    60 V
    -
    SO-8
    -
    -
    Surface Mount
    -
    8
    -
    Enhancement
    -
    -
    -
    -
    -
    4
    Silicon
    -
    -
    Infineon
    N
    49 A
    55 V
    -
    TO-262
    HEXFET
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Microchip
    P
    250 mA
    60 V
    8 Ω
    TO-92
    VP0106
    3.5V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    P
    18 A
    55 V
    110 mΩ
    DPAK (TO-252)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    57 W
    -
    Single
    6.73mm
    +150 °C
    1
    Si
    32 nC @ 10 V
    6.22mm
    Infineon
    N
    557 A
    40 V
    0.00065 Ω
    D2PAK-7
    HEXFET
    2.4V
    Surface Mount
    -
    7
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Toshiba
    N
    31 A
    600 V
    88 mΩ
    TO-220
    TK
    3.7V
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    230 W
    -
    Single
    10.16mm
    +150 °C
    1
    Si
    86 nC @ 10 V
    4.45mm
    onsemi
    P
    1.5 A
    30 V
    125 mΩ
    SOT-23
    PowerTrench
    -
    Surface Mount
    1V
    3
    -20 V, +20 V
    Enhancement
    500 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    4 nC @ 10 V
    1.4mm
    Toshiba
    P
    6 A
    12 V
    2.63e+007 Ω
    SOT-23
    -
    1V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Toshiba
    P
    6 A
    12 V
    2.63e+007 Ω
    SOT-23
    -
    1V
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    IXYS
    N
    96 A
    200 V
    24 mΩ
    TO-247
    HiperFET, Polar
    5V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    600 W
    -
    Single
    16.26mm
    +175 °C
    1
    Si
    145 nC @ 10 V
    5.3mm
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