Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
- RS-stocknr.:
- 688-7204
- Fabrikantnummer:
- IRLB3034PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,78
(excl. BTW)
€ 7,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 24 stuk(s) vanaf 30 juli 2025
- Plus verzending 40 stuk(s) vanaf 30 juli 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
---|---|---|
2 - 18 | € 2,89 | € 5,78 |
20 - 48 | € 2,60 | € 5,20 |
50 - 98 | € 2,425 | € 4,85 |
100 - 198 | € 2,28 | € 4,56 |
200 + | € 2,11 | € 4,22 |
*prijsindicatie
- RS-stocknr.:
- 688-7204
- Fabrikantnummer:
- IRLB3034PBF
- Fabrikant:
- Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
---|---|---|
Merk | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 343 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TO-220AB | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 375 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Width | 4.83mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 108 nC @ 4.5 V | |
Height | 9.02mm | |
Forward Diode Voltage | 1.3V | |
Minimum Operating Temperature | -55 °C | |
Alles selecteren | ||
---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 343 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 108 nC @ 4.5 V | ||
Height 9.02mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
- Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin D2PAK IRLS3034TRLPBF
- Infineon HEXFET N-Channel MOSFET, 317 A, 40 V TO-220AB IRFB7434PBF
- Infineon HEXFET N-Channel MOSFET, 340 A, 40 V TO-220AB IRFB3004PBF
- Infineon HEXFET N-Channel MOSFET, 100 A, 40 V TO-220AB IRF1104PBF
- Infineon HEXFET N-Channel MOSFET, 90 A, 40 V TO-220AB IRF1018ESTRLPBF
- Infineon HEXFET N-Channel MOSFET, 202 A, 40 V, 3-Pin TO-220AB IRF1404PBF
- Infineon HEXFET N-Channel MOSFET, 180 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF