MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Omschrijving Prijs Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Automotive Standard
RS-stocknr. 166-2619
FabrikantnummerFDS8884
FabrikantON Semiconductor
0,197 €
Each (On a Reel of 2500)
Aantal stuks
N 8.5 A 30 V 23 mΩ - 1.2V -20 V, +20 V SOIC Surface Mount 8 Single Enhancement 2.5 W -
RS-stocknr. 671-0722
FabrikantnummerFDS8884
FabrikantON Semiconductor
0,436 €
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Aantal stuks
N 8.5 A 30 V 23 mΩ - 1.2V -20 V, +20 V SOIC Surface Mount 8 Single Enhancement 2.5 W -
RS-stocknr. 166-1755
FabrikantnummerFQT7N10LTF
FabrikantON Semiconductor
0,156 €
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Aantal stuks
N 1.7 A 100 V 350 mΩ - 1V -20 V, +20 V SOT-223 Surface Mount 3 + Tab Single Enhancement 2 W -
RS-stocknr. 165-7524
FabrikantnummerIPD70N10S3L12ATMA1
FabrikantInfineon
0,66 €
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N 70 A 100 V 15.2 mΩ 2.4V 1.2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement 125 W -
RS-stocknr. 671-1062
FabrikantnummerFQT7N10LTF
FabrikantON Semiconductor
0,442 €
Each (In a Pack of 5)
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N 1.7 A 100 V 350 mΩ - 1V -20 V, +20 V SOT-223 Surface Mount 3 + Tab Single Enhancement 2 W -
RS-stocknr. 753-3021
FabrikantnummerIPD70N10S3L12ATMA1
FabrikantInfineon
1,358 €
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N 70 A 100 V 15.2 mΩ 2.4V 1.2V -20 V, +20 V DPAK (TO-252) Surface Mount 3 Single Enhancement 125 W -
RS-stocknr. 708-5134
FabrikantnummerIRF510PBF
FabrikantVishay
0,813 €
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N 5.6 A 100 V 540 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 43 W -
RS-stocknr. 919-0023
FabrikantnummerIRF510PBF
FabrikantVishay
0,706 €
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N 5.6 A 100 V 540 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 43 W -
RS-stocknr. 124-1694
FabrikantnummerBSS138
FabrikantON Semiconductor
0,04 €
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N 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW -
RS-stocknr. 671-0324
FabrikantnummerBSS138
FabrikantON Semiconductor
0,195 €
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N 220 mA 50 V 3.5 Ω 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement 360 mW -
RS-stocknr. 671-4736
FabrikantnummerBS170
FabrikantON Semiconductor
0,255 €
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N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW -
RS-stocknr. 124-1745
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FabrikantON Semiconductor
0,078 €
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N 500 mA 60 V 5 Ω 3V 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement 830 mW -
RS-stocknr. 178-0818
FabrikantnummerIRFBE30PBF
FabrikantVishay
1,42 €
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N 4.1 A 800 V 3 Ω - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 125 W -
RS-stocknr. 541-1124
FabrikantnummerIRFBE30PBF
FabrikantVishay
1,48 €
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N 4.1 A 800 V 3 Ω - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 125 W -
RS-stocknr. 830-3509
FabrikantnummerIRF5806TRPBF
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P 4 A 20 V 147 mΩ 1.2V 0.45V -20 V, +20 V TSOP Surface Mount 6 Single Enhancement 2 W -
RS-stocknr. 145-9508
FabrikantnummerIRF5806TRPBF
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0,146 €
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P 4 A 20 V 147 mΩ 1.2V 0.45V -20 V, +20 V TSOP Surface Mount 6 Single Enhancement 2 W -
RS-stocknr. 829-3332
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N 120 mA 350 V 25 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Depletion 1 W -
RS-stocknr. 759-9128
FabrikantnummerFDL100N50F
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N 100 A 500 V 55 mΩ - 3V -30 V, +30 V TO-264 Through Hole 3 Single Enhancement 2.5 kW -
RS-stocknr. 169-7205
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N 100 A 30 V 1.8 mΩ 2.15V 1.3V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement 270 W -
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