MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18836 Producten voor MOSFETs

    Infineon
    P
    74 A
    55 V
    20 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    200 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    180 nC @ 10 V
    4.69mm
    STMicroelectronics
    N
    10 A
    600 V
    750 mΩ
    TO-220FP
    MDmesh, SuperMESH
    4.5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    35 W
    -
    Single
    10.4mm
    +150 °C
    1
    Si
    50 nC @ 10 V
    4.6mm
    Vishay
    N
    8 A
    500 V
    850 mΩ
    TO-220AB
    -
    -
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    125 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    39 nC @ 10 V
    4.7mm
    Toshiba
    N
    9 A
    900 V
    1.3 Ω
    TO-3PN
    TK
    4V
    Through Hole
    -
    3
    -30 V, +30 V
    Enhancement
    250 W
    -
    Single
    15.5mm
    +150 °C
    1
    Si
    46 nC @ 10 V
    4.5mm
    Vishay
    N
    5.6 A
    100 V
    540 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    43 W
    -
    Single
    10.41mm
    +175 °C
    1
    Si
    8.3 nC @ 10 V
    4.7mm
    Vishay
    N, P
    7.2 A, 8 A
    40 V
    20 mΩ, 28 mΩ
    SOIC
    -
    -
    Surface Mount
    0.8V
    8
    -20 V, -16 V, +16 V, +20 V
    Enhancement
    3.1 W, 3.2 W
    -
    Isolated
    5mm
    +150 °C
    2
    Si
    20.5 nC @ 10 V, 41.5 nC @ 10 V
    4mm
    Infineon
    N
    89 A
    75 V
    9.4 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    170 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    71 nC @ 10 V
    9.65mm
    DiodesZetex
    N
    270 mA
    60 V
    5 Ω
    E-Line
    -
    2.5V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    625 mW
    -
    Single
    4.77mm
    +150 °C
    1
    Si
    -
    2.41mm
    Vishay
    N
    8 A
    40 V
    0.036 O
    SOT-23
    TrenchFET
    2.5V
    Surface Mount
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Toshiba
    N
    3.5 A
    100 V
    92 mΩ
    SOT-23
    -
    2.5V
    Surface Mount
    1.5V
    3
    ±20 V
    Enhancement
    2.4 W
    -
    Single
    2.9mm
    +175 °C
    1
    -
    3.2 nC @ 4.5 V
    1.8mm
    onsemi
    N
    6.5 A
    20 V
    30 mΩ
    SOIC
    PowerTrench
    -
    Surface Mount
    0.6V
    8
    -10 V, +10 V
    Enhancement
    2 W
    -
    Isolated
    5mm
    +150 °C
    2
    Si
    6.2 nC @ 4.5 V
    4mm
    onsemi
    P
    2.7 A
    500 V
    4.9 Ω
    TO-220AB
    QFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    85 W
    -
    Single
    10.1mm
    +150 °C
    1
    Si
    18 nC @ 10 V
    4.7mm
    Infineon
    N
    31 A
    650 V
    99 mΩ
    TO-247
    CoolMOS CP
    3.5V
    Through Hole
    2.5V
    3
    -20 V, +20 V
    Enhancement
    255 W
    -
    Single
    16.13mm
    +150 °C
    1
    Si
    14 nC @ 10 V
    5.21mm
    onsemi
    N
    2.7 A
    100 V
    183 mΩ
    SOT-23
    PowerTrench
    -
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    1.5 W
    -
    Single
    1.4mm
    +150 °C
    1
    Si
    3 nC @ 10 V
    2.92mm
    onsemi
    N
    280 mA
    60 V
    2 Ω
    SOT-23
    -
    -
    Surface Mount
    1V
    3
    -20 V, +20 V
    Enhancement
    300 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    -
    1.3mm
    IXYS
    N
    310 A
    150 V
    4 mΩ
    SOT-227
    GigaMOS TrenchT2 HiperFET
    5V
    Screw Mount
    2.5V
    4
    -20 V, +20 V
    Enhancement
    1.07 kW
    -
    -
    38.23mm
    +175 °C
    1
    -
    715 nC @ 10 V
    25.07mm
    Infineon
    N
    120 A
    40 V
    -
    SuperSO8 5 x 6
    -
    -
    Surface Mount
    -
    8
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    ROHM
    N
    10 A
    1200 V
    610 mΩ
    TO-247
    -
    4V
    Through Hole
    -
    3
    -
    Enhancement
    85 W
    -
    Single
    15.9mm
    +175 °C
    1
    SiC
    27 nC @ 18 V
    20.95mm
    Infineon
    N
    20 A
    100 V
    52 mΩ
    TO-220
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    54 W
    -
    Single
    10.63mm
    +175 °C
    1
    Si
    94 nC @ 10 V
    4.83mm
    Vishay
    N
    2.5 A
    60 V
    100 mΩ
    HVMDIP
    -
    -
    Through Hole
    1V
    4
    -10 V, +10 V
    Enhancement
    1.3 W
    -
    Single
    5mm
    +175 °C
    1
    Si
    18 nC @ 5 V
    6.29mm
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