MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18836 Producten voor MOSFETs

    Vishay
    N
    430 A
    80 V
    -
    PowerPAK 8 x 8LR
    -
    -
    Surface Mount
    -
    8
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    4 A
    800 V
    0.14 Ω
    TO-220
    CoolMOS™
    3.5V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Nexperia
    N
    320 mA
    60 V
    1.6 Ω
    SOT-363
    -
    1.5V
    Surface Mount
    0.9V
    6
    -20 V, +20 V
    Enhancement
    320 mW
    -
    Isolated
    2.2mm
    +150 °C
    2
    Si
    0.72 nC @ 4.5 V
    1.35mm
    Vishay Siliconix
    P
    10 A
    40 V
    80 mΩ
    SC-70-6L
    TrenchFET
    2.5V
    Surface Mount
    1.5V
    6
    ±20 V
    Enhancement
    13.6 W
    -
    Single
    2.2mm
    +175 °C
    1
    Si
    26 nC @ 10 V
    1.35mm
    onsemi
    N, P
    460 mA, 680 mA
    25 V
    1.1 Ω, 450 mΩ
    SOT-23
    -
    -
    Surface Mount
    0.65V
    6
    -8 V, +8 V
    Enhancement
    900 mW
    -
    Isolated
    3mm
    +150 °C
    2
    Si
    1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V
    1.7mm
    Nexperia
    N
    400 mA
    200 V
    3 Ω
    SOT-89
    -
    2.8V
    Surface Mount
    0.8V
    3
    -20 V, +20 V
    Enhancement
    1 W
    -
    Single
    4.6mm
    +150 °C
    1
    Si
    -
    2.6mm
    onsemi
    P
    130 mA
    50 V
    10 Ω
    SOT-23
    -
    -
    Surface Mount
    0.8V
    3
    -20 V, +20 V
    Enhancement
    360 mW
    -
    Single
    2.92mm
    +150 °C
    1
    Si
    0.9 nC @ 5 V
    1.3mm
    Infineon
    N
    100 A
    40 V
    5.3 mΩ
    TDSON
    OptiMOS™ 3
    2V
    Surface Mount
    1.2V
    8
    -20 V, +20 V
    Enhancement
    69 W
    -
    Single
    5.35mm
    +150 °C
    1
    Si
    48 nC @ 10 V
    6.35mm
    Infineon
    N
    120 A
    100 V
    4.5 mΩ
    D2PAK (TO-263)
    OptiMOS™ 3
    3.5V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    300 W
    -
    Single
    10.31mm
    +175 °C
    1
    Si
    155 nC @ 10 V
    9.45mm
    Infineon
    N
    200 A
    60 V
    3 mΩ
    TO-247AC
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    280 W
    -
    Single
    15.87mm
    +175 °C
    1
    Si
    120 nC @ 10 V
    5.31mm
    Infineon
    N
    4.4 A
    55 V
    100 mΩ
    SOT-223
    HEXFET
    2V
    Surface Mount
    1V
    3
    -16 V, +16 V
    Enhancement
    2.1 W
    -
    Single
    6.7mm
    +150 °C
    1
    Si
    10.4 nC @ 5 V
    3.7mm
    Infineon
    N
    209 A
    75 V
    5 mΩ
    TO-247AC
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    470 W
    -
    Single
    15.9mm
    +175 °C
    1
    Si
    410 nC @ 10 V
    5.3mm
    Infineon
    N
    127 A
    100 V
    6 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    250 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    120 nC @ 10 V
    11.3mm
    DiodesZetex
    P
    10.5 A
    40 V
    85 mΩ
    DPAK (TO-252)
    -
    3V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    8.9 W
    -
    Single
    6.7mm
    +150 °C
    1
    Si
    14 nC @ 10 V
    6.2mm
    Infineon
    N
    62 A
    30 V
    9 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    65 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    7.6 nC @ 4.5 V
    4.83mm
    DiodesZetex
    N
    11.9 A
    60 V
    28 mΩ
    SOIC
    -
    2.5V
    Surface Mount
    1V
    8
    -20 V, +20 V
    Enhancement
    2.1 W
    -
    Single
    4.95mm
    +150 °C
    1
    Si
    17 nC @ 10 V
    3.95mm
    DiodesZetex
    N
    710 mA
    60 V
    2 Ω
    SOT-223
    -
    2.4V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    2 W
    -
    Single
    6.7mm
    +150 °C
    1
    Si
    -
    3.7mm
    STMicroelectronics
    N
    80 A
    75 V
    11 mΩ
    TO-220
    STripFET II
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    300 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    117 nC @ 10 V
    4.6mm
    onsemi
    N
    57 A
    600 V
    0.041 Ω
    TO-247
    SUPERFET V
    4.3V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Infineon
    N
    62 A
    30 V
    9 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    65 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    7.6 nC @ 4.5 V
    4.83mm
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