onsemi QFET Type P-Channel P-Channel QFET MOSFET, 2.7 A, 500 V Enhancement, 3-Pin TO-220AB FQP3P50
- RS-stocknr.:
- 671-5118
- Fabrikantnummer:
- FQP3P50
- Fabrikant:
- onsemi
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RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 671-5118
- Fabrikantnummer:
- FQP3P50
- Fabrikant:
- onsemi
Specificaties
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Wetgeving en conformiteit
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | P-Channel QFET MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | QFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -5V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | 55°C | |
| Maximum Power Dissipation Pd | 85W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type P-Channel QFET MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series QFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -5V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature 55°C | ||
Maximum Power Dissipation Pd 85W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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