Renesas N-Channel MOSFET, 30 A, 80 V, 4+Tab-Pin LFPAK RJK0852DPB-WS#J5
- RS-stocknr.:
- 124-3703
- Fabrikantnummer:
- RJK0852DPB-WS#J5
- Fabrikant:
- Renesas Electronics
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 124-3703
- Fabrikantnummer:
- RJK0852DPB-WS#J5
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | LFPAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 4+Tab | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5.3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.95mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 28 nC @ 4.5 V | |
| Height | 1.03mm | |
| Forward Diode Voltage | 1.1V | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type LFPAK | ||
Mounting Type Surface Mount | ||
Pin Count 4+Tab | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 3.95mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 28 nC @ 4.5 V | ||
Height 1.03mm | ||
Forward Diode Voltage 1.1V | ||
N-Channel Low Voltage MOSFETs up to 140V, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)
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