JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Omschrijving Prijs Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS-stocknr. 166-2910
FabrikantnummerJ111
FabrikantON Semiconductor
0,071 €
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Aantal stuks
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 806-1753
FabrikantnummerJ111
FabrikantON Semiconductor
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N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 166-1831
FabrikantnummerMMBFJ113
FabrikantON Semiconductor
0,069 €
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N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS-stocknr. 761-4524
FabrikantnummerMMBFJ113
FabrikantON Semiconductor
0,265 €
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N Min. 2mA - -35 V 35V Single Single 100 Ω Surface Mount SOT-23 3 28pF 28pF 2.92 x 1.3 x 0.93mm
RS-stocknr. 124-1385
FabrikantnummerJ112
FabrikantON Semiconductor
0,094 €
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N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 163-2337
FabrikantnummerMMBF4391LT1G
FabrikantON Semiconductor
0,079 €
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N 50 to 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS-stocknr. 625-5723
FabrikantnummerMMBF4391LT1G
FabrikantON Semiconductor
0,382 €
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N 50 to 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS-stocknr. 806-1757
FabrikantnummerJ112
FabrikantON Semiconductor
0,257 €
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N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 807-5201
FabrikantnummerBSR58
FabrikantON Semiconductor
0,118 €
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N 8 to 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS-stocknr. 806-1766
FabrikantnummerJ113
FabrikantON Semiconductor
0,239 €
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N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 166-2319
FabrikantnummerBSR58
FabrikantON Semiconductor
0,069 €
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N 8 to 80mA 0.4 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.97mm
RS-stocknr. 145-5347
FabrikantnummerJ113
FabrikantON Semiconductor
0,087 €
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N Min. 2mA - -35 V 35V Single Single 100 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS-stocknr. 145-4270
FabrikantnummerMMBF4393LT1G
FabrikantON Semiconductor
0,084 €
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N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS-stocknr. 166-2224
FabrikantnummerMMBFJ270
FabrikantON Semiconductor
0,107 €
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P -2 to -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS-stocknr. 864-7846
FabrikantnummerMMBF4393LT1G
FabrikantON Semiconductor
0,264 €
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N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS-stocknr. 806-4318
FabrikantnummerMMBFJ270
FabrikantON Semiconductor
0,307 €
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P -2 to -15mA 15 V +30 V -30V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS-stocknr. 166-3093
FabrikantnummerMMBFJ111
FabrikantON Semiconductor
0,077 €
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N 20mA 15 V -35 V 35V Single Single 30 Ω Surface Mount SOT-23 3 28pF 28pF 2.9 x 1.3 x 1.04mm
RS-stocknr. 166-3094
FabrikantnummerMMBFJ176
FabrikantON Semiconductor
0,107 €
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P -2 to -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS-stocknr. 166-0535
FabrikantnummerBF510,215
FabrikantNXP
0,145 €
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N 0.7 to 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS-stocknr. 166-2021
FabrikantnummerJ109
FabrikantON Semiconductor
0,125 €
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N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm