ROHM QS6M3 Dual N/P-Channel MOSFET, 1.5 A, 20 V, 30 V, 6-Pin TSMT QS6M3TR
- RS-stocknr.:
- 124-6766P
- Fabrikantnummer:
- QS6M3TR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal 125 eenheden (geleverd op een doorlopende strip)*
€ 24,00
(excl. BTW)
€ 29,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk |
|---|---|
| 125 - 225 | € 0,192 |
| 250 - 600 | € 0,174 |
| 625 - 1225 | € 0,16 |
| 1250 + | € 0,148 |
*prijsindicatie
- RS-stocknr.:
- 124-6766P
- Fabrikantnummer:
- QS6M3TR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 20 V, 30 V | |
| Package Type | TSMT | |
| Series | QS6M3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Dual Base | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V | |
| Width | 1.6mm | |
| Length | 2.9mm | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.2V | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 20 V, 30 V | ||
Package Type TSMT | ||
Series QS6M3 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Dual Base | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 1.6 nC @ 4.5 V | ||
Width 1.6mm | ||
Length 2.9mm | ||
Height 0.85mm | ||
Forward Diode Voltage 1.2V | ||
Dual, N-Channel and P-Channel MOSFET, ROHM
MOSFET Transistors, ROHM Semiconductor