Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 210-4991
- Fabrikantnummer:
- SIHP15N80AE-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 58,00
(excl. BTW)
€ 70,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 900 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,16 | € 58,00 |
| 100 - 200 | € 1,091 | € 54,55 |
| 250 - 450 | € 1,026 | € 51,30 |
| 500 - 1200 | € 1,00 | € 50,00 |
| 1250 + | € 0,975 | € 48,75 |
*prijsindicatie
- RS-stocknr.:
- 210-4991
- Fabrikantnummer:
- SIHP15N80AE-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 27.69mm | |
| Height | 4.24mm | |
| Width | 9.96 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 27.69mm | ||
Height 4.24mm | ||
Width 9.96 mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has TO-220AB package type with 13 A drain current.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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