Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SiHP080N60E-GE3

RS-stocknr.:: 228-2874
Fabrikantnummer:: SiHP080N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SiHP080N60E-GE3

Subtotaal (1 tube van 50 eenheden)*

€ 175,20

(excl. BTW)

€ 212,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 650 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 3,504	€ 175,20

*prijsindicatie

RS-stocknr.:: 228-2874
Fabrikantnummer:: SiHP080N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	227W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 227W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHP080N60E-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SiHP080N60E-GE3

This power MOSFET is a high-voltage, N-channel switching transistor intended for through-hole power applications where robust thermal and electrical performance are required. It operates across a wide ambient range, supports switching duties with moderate gate charge, and mounts in a TO-220AB package for straightforward heatsinking and assembly on conventional boards.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 35A continuous current capability supports substantial load currents
• 80mΩ Rds(on) minimises conduction losses during power transfer
• 227W maximum dissipation allows sustained power handling
• 42nC typical gate charge yields predictable switching energy
• ±30V gate tolerance permits wide drive voltage margins

Applications

• Suitable for mains-derived SMPS and PFC circuits
• Ideal for industrial motor drive inverter stages
• Used with high-voltage DC-DC converters in telecoms
• Can be used for switch-mode lighting and ballast systems
• Employed in battery-charging and energy-storage converters

What thermal range can the device tolerate in harsh environments?

It is rated to function from -55°C up to 150°C, permitting operation across industrial temperature extremes.

How is the device intended to be mounted and cooled?

The TO-220AB through-hole format accommodates direct heatsink attachment for effective thermal management and board-mounted power designs.

What gate drive limits should be observed during design?

Gate-source voltage must not exceed ±30V to avoid gate-oxide stress and ensure reliable switching.

Does the component suit low-voltage signal switching tasks?

Its 1.2V forward voltage and power-focused construction make it optimised for high-voltage power conversion rather than low-voltage signal switching.