Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB SIHP690N60E-GE3

RS-stocknr.:: 200-6821
Fabrikantnummer:: SIHP690N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-220AB SIHP690N60E-GE3

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250 - 600	€ 1,758	€ 43,95
625 +	€ 1,648	€ 41,20

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RS-stocknr.:: 200-6821
Fabrikantnummer:: SIHP690N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	6.4A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	700mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	62.5W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 6.4A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 700mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 62.5W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Document- SIHP690N60E-GE3

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 6.4A Maximum Continuous Drain Current - SIHP690N60E-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion tasks in industrial electronic systems. It operates across a wide temperature span and is supplied in a through-hole TO-220AB package suitable for conventional heatsinking and manual assembly contexts.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching capability
• 6.4A continuous drain current supports moderate load currents
• 700mΩ Rds(on) minimises conduction losses under load
• 62.5W power dissipation allows substantial thermal handling
• 12nC gate charge reduces driving energy for faster switching
• 30V gate-source tolerance permits flexible gate drive levels

Applications

• Suitable for offline power supplies and high-voltage converters
• Ideal for motor-drive gate stage and inverter switching
• Used with discrete switch-mode power supplies in industrial equipment
• Can be used for lab prototypes requiring through-hole mounting
• Appropriate for driver stages in high-voltage lighting control

What temperature range can it tolerate in demanding installations?

It is specified to operate from -55°C up to 150°C, accommodating harsh industrial environments.

What mounting and cooling options are compatible with it?

The TO-220AB through-hole format permits direct PCB mounting and attachment to conventional heatsinks for enhanced thermal management.

How does its gate charge affect driver selection?

With a typical gate charge of 12nC, it requires moderate gate-drive capability, enabling use with compact drivers while maintaining reasonable switching speeds.

Is it suitable for automotive-grade applications?

It is not specified to meet automotive standards, so it is more appropriate for general industrial and commercial electronic designs.