Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3

RS-stocknr.:: 268-8317
Fabrikantnummer:: SIHP085N60EF-GE3
Fabrikant:: Vishay

Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 118,60

(excl. BTW)

€ 143,50

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Laatste voorraad RS

Laatste 1.000 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,372	€ 118,60
100 - 450	€ 1,975	€ 98,75
500 - 950	€ 1,951	€ 97,55
1000 +	€ 1,928	€ 96,40

*prijsindicatie

RS-stocknr.:: 268-8317
Fabrikantnummer:: SIHP085N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHP
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	63nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Series SIHP
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 63nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP085N60EF-GE3

Land van herkomst:: CN

Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHP085N60EF-GE3

This MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in demanding power circuits. It operates across a broad temperature span, making it suitable for environments where thermal robustness is required, and it offers substantial continuous current capability and voltage handling for conversion and switching tasks.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy-load applications
• 0.084Ω low RDS(on) minimises conduction losses
• 184W power dissipation allows high-power operation
• 63nC typical gate charge permits controlled switching transitions
• 1.2V forward voltage reduces drop in body-diode conduction

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial systems
• Used for motor-drive stages requiring high current handling
• Can be used for hard-switching topologies and energy recovery
• Suitable for laboratory and prototyping with through-hole mounting

What mounting method is required for board assembly?

It is supplied in a TO-220AB package intended for through-hole mounting and standard heatsinking options.

What gate drive voltage limits should I observe?

The maximum gate-source voltage is 30V, so gate-drive circuitry must keep within this limit to avoid damage.

How does it cope with temperature extremes during operation?

The device is rated to operate down to -55°C and up to 150°C, allowing use across wide ambient and elevated junction temperatures.

What polarity and mode does the channel present for circuit design?

It is an N-channel enhancement-mode device, requiring positive gate bias relative to the source for conduction.