Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

RS-stocknr.:: 279-9924
Fabrikantnummer:: SIHP074N65E-GE3
Fabrikant:: Vishay

Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

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RS-stocknr.:: 279-9924
Fabrikantnummer:: SIHP074N65E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHP
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.078Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	8nC
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 650V
	Series SIHP
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.078Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 8nC
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP074N65E-GE3

Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SIHP074N65E-GE3

This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in industrial electronics. It supports through-hole mounting in a TO-220AB package and is suited to applications requiring robust thermal handling and gate protection within a broad ambient range.

Features and Benefits:

• 650V drain rating enabling high-voltage switching capability
• 35A continuous drain current for sustained power delivery
• 0.078Ω RDS(on) delivering low conduction losses
• 250W power dissipation for elevated thermal performance
• 8nC typical gate charge for efficient gate-drive switching
• 30V maximum gate-source protection to limit gate stress

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used for renewable energy power-conditioning circuits
• Can be used for hard-switching in industrial converters
• Suitable for through-hole replacement in legacy designs

What temperature extremes can it withstand during operation?

It operates reliably across a wide thermal range from -55°C up to 150°C, allowing use in harsh ambient conditions.

How does the package affect cooling and mounting?

The TO-220AB through-hole package provides a metal tab for heatsinking and straightforward PCB or chassis attachment for enhanced thermal management.

What gate-drive considerations are required for switching performance?

Design gate drivers to supply sufficient current for an 8nC gate charge to achieve desired switching speeds while respecting the 30V gate-source limit.

Are there specific forward conduction characteristics to note?

The device presents a forward voltage of 1.2V under conduction, which should be accounted for in loss and thermal calculations.