Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3

RS-stocknr.:: 210-4969
Fabrikantnummer:: SIHB15N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 78,00

(excl. BTW)

€ 94,50

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 2.950 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,56	€ 78,00
100 - 200	€ 1,248	€ 62,40
250 +	€ 1,092	€ 54,60

*prijsindicatie

RS-stocknr.:: 210-4969
Fabrikantnummer:: SIHB15N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	9.65mm
	Standards/Approvals	RoHS
	Height	4.06mm
	Length	14.61mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 9.65mm
	Standards/Approvals RoHS
	Height 4.06mm
	Length 14.61mm
	Automotive Standard No

Datasheet - SIHB15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHB15N80AE-GE3

This power MOSFET is a high-voltage N-channel switch intended for surface-mounted power conversion and control applications. It operates across a wide ambient range and is engineered to handle elevated voltages and thermal loads in demanding electronic systems while meeting RoHS environmental requirements.

Features and Benefits:

• 800V drain rating enables high-voltage switching capability
• 13A continuous drain current supports substantial load currents
• 304mΩ Rds(on) minimises conduction losses during operation
• 156W power dissipation allows for sustained thermal handling
• 35nC typical gate charge aids predictable gate-drive sizing
• 30V gate tolerance permits robust gate-drive voltages

Applications

• Used for high-voltage power supplies and converters
• Suitable for industrial motor drive stages
• Ideal for switch-mode power supply primary switches
• Can be used for welding or plasma power control modules
• Used with high-voltage inverters in industrial equipment

What package type should be considered for thermal management on boards?

It is supplied in a TO-263 surface-mount package which offers a low-profile thermal path to PCB copper for heat-sinking.

How does the device behave across temperature extremes?

The device is rated to operate from -55°C up to 150°C, allowing use in both cold-start and high-temperature environments.

What gate-drive limitations must designers observe?

The gate must not exceed ±30V relative to source to avoid damage to the gate oxide and ensure reliable switching.

What forward conduction characteristic is present during body diode conduction?

The intrinsic diode exhibits a forward voltage of approximately 1.2V when conducting in reverse-polarity conditions.