Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3

RS-stocknr.:: 653-139
Fabrikantnummer:: SIHP11N80AEF-GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 64,85

(excl. BTW)

€ 78,45

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 1.000 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 200	€ 1,297	€ 64,85
250 +	€ 1,271	€ 63,55

*prijsindicatie

RS-stocknr.:: 653-139
Fabrikantnummer:: SIHP11N80AEF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	EF
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.483Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	78W
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series EF
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.483Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 78W
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHP11N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHP11N80AEF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in demanding electronic systems. It operates over a wide temperature span and fits a through-hole TO-220AB package, making it suitable for repairs, prototype boards and production assemblies where a robust, mountable device is required. The component is RoHS-compliant and intended for enhancement-mode applications requiring substantial voltage handling and moderate current.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 8A continuous drain current supports sustained load conduction
• 0.483Ω Rds(on) reduces conduction losses during operation
• 78W power dissipation capacity tolerates elevated thermal load
• 27nC typical gate charge gives predictable switching behaviour
• ±30V gate tolerance permits high gate-drive amplitudes

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages with medium current requirements
• Used with industrial switching circuits exposed to heat
• Can be used for battery-charger and inverter topologies
• Suited to through-hole hardware repair and retrofit projects

What temperature range will it function within?

It is rated to operate from -55°C up to 150°C, permitting use in environments with large thermal variations.

How should it be mounted for effective heat management?

The TO-220AB through-hole package allows attachment to a heatsink for improved thermal dissipation and stable power handling.

What gate-drive considerations are required?

The device is gate-rated to ±30V, so gate drivers should be selected to provide appropriate voltage without exceeding this limit.

Is it suitable for automotive-standard designs?

It is not specified to meet automotive standards, so designs requiring automotive qualification should consider that limitation.