Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

RS-stocknr.:: 210-4983
Fabrikantnummer:: SIHG15N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

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Subtotaal (1 tube van 25 eenheden)*

€ 50,40

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€ 60,975

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 175 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
25 - 25	€ 2,016	€ 50,40
50 - 100	€ 1,895	€ 47,38
125 +	€ 1,714	€ 42,85

*prijsindicatie

RS-stocknr.:: 210-4983
Fabrikantnummer:: SIHG15N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Power Dissipation Pd	156W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	28.6mm
	Width	15.5mm
	Height	4.6mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Power Dissipation Pd 156W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 28.6mm
	Width 15.5mm
	Height 4.6mm
	Automotive Standard No

Datasheet - SIHG15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 156W Maximum Power Dissipation - SIHG15N80AE-GE3

This power MOSFET is a high-voltage switching device designed for through-hole mounting in power conversion and industrial control environments. It is an N-channel enhancement type fabricated to handle elevated drain-source potentials while operating across a wide temperature span, making it suitable for demanding thermal and electrical conditions where robust high-voltage switching is required.

Features and Benefits:

• 800V drain-source withstand for high-voltage switching capability
• 13A continuous drain current for sustained load handling
• 304mΩ Rds(on) to reduce conduction losses
• 156W maximum dissipation for higher power throughput
• 35nC typical gate charge for efficient switching control
• 30V gate rating for compatibility with common driver circuits

Applications

• Suitable for industrial power converters and inverters
• Used for high-voltage motor drive stages
• Ideal for switch-mode power supplies in industrial settings
• Can be used for high-voltage testing and protection circuits
• Suitable for rugged through-hole assembly in control panels

What temperature range can it reliably operate within?

It is specified to operate from -55°C up to 150°C, suitable for harsh thermal environments.

Which package and mounting method does it use for assembly?

The device is supplied in a TO-247AC package configured for through-hole mounting.

How does its gate characteristic affect switching performance?

With a typical gate charge of 35nC the device requires moderate drive energy, balancing switching speed and driver demands.

What is the forward voltage behaviour to expect during conduction?

The forward voltage is specified at 1.2V which indicates its conduction drop in forward-biased conditions.