Vishay EF Type N-Channel Power MOSFET, 13 A, 800 V, 3-Pin TO-247AC SIHG15N80AEF-GE3

Bulkkorting beschikbaar
Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 18,12

(excl. BTW)

€ 21,925

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 530 stuk(s) vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks
Per stuk
Per verpakking*
5 - 45€ 3,624€ 18,12
50 - 120€ 3,262€ 16,31
125 - 245€ 3,076€ 15,38
250 - 495€ 2,90€ 14,50
500 +€ 2,68€ 13,40

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
225-9914
Fabrikantnummer:
SIHG15N80AEF-GE3
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

EF

Package Type

TO-247AC

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

350mΩ

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

53nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

10.41mm

Standards/Approvals

RoHS

Width

2.39mm

Length

6.73mm

Automotive Standard

No

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AEF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for demanding power-electronic environments. It is intended for use where robust high-voltage handling and significant continuous current capability are required, operating across a wide ambient temperature range and supplied in a TO-247AC package for mounting on surfaces.

Features and Benefits:


• 800V drain-to-source rating enables high-voltage system integration
• 13A continuous drain current supports moderate power throughput
• 350mΩ low Rds(on) reduces conduction losses during operation
• 156W power dissipation allows sustained thermal loading
• 53nC typical gate charge facilitates predictable switching performance
• ±30V gate tolerance permits wide control-voltage flexibility

Applications


• Used for high-voltage power conversion stages
• Suitable for industrial motor drive switching
• Ideal for switch-mode power supplies in energy systems
• Can be used for clamped inductive load switching
• Used with gate drivers for fast-switching topologies

What temperature extremes can it withstand in operation?


It is rated for continuous operation from -55°C up to 150°C, allowing use in both cold and high-temperature environments.

How does the package affect thermal and mounting choices?


The TO-247AC surface package provides a large thermal pad area suitable for heatsinking and straightforward solder or clip mounting to manage dissipation.

What gate-drive constraints should be observed?


The device tolerates gate-source voltages up to 30V, so gate drivers should be selected to stay within that limit to avoid gate overstress.

What forward conduction behaviour can be expected during switching transitions?


The forward voltage is specified at 1.2V, which informs predicted conduction voltage drop during the on-state and helps size snubbers or clamp networks.

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.