Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
- RS-stocknr.:
- 210-4984
- Fabrikantnummer:
- SIHG15N80AE-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,88
(excl. BTW)
€ 21,635
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- Plus verzending 195 stuk(s) vanaf 10 augustus 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,576 | € 17,88 |
| 50 - 120 | € 3,398 | € 16,99 |
| 125 - 245 | € 3,22 | € 16,10 |
| 250 - 495 | € 3,04 | € 15,20 |
| 500 + | € 2,86 | € 14,30 |
*prijsindicatie
- RS-stocknr.:
- 210-4984
- Fabrikantnummer:
- SIHG15N80AE-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-247AC | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 304mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Width | 15.5mm | |
| Length | 28.6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-247AC | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 304mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Width 15.5mm | ||
Length 28.6mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 156W Maximum Power Dissipation - SIHG15N80AE-GE3
Features and Benefits:
• 13A continuous drain current for sustained load handling
• 304mΩ Rds(on) to reduce conduction losses
• 156W maximum dissipation for higher power throughput
• 35nC typical gate charge for efficient switching control
• 30V gate rating for compatibility with common driver circuits
Applications
• Used for high-voltage motor drive stages
• Ideal for switch-mode power supplies in industrial settings
• Can be used for high-voltage testing and protection circuits
• Suitable for rugged through-hole assembly in control panels
What temperature range can it reliably operate within?
Which package and mounting method does it use for assembly?
How does its gate characteristic affect switching performance?
What is the forward voltage behaviour to expect during conduction?
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