Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

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Verpakkingsopties
RS-stocknr.:
210-4984
Fabrikantnummer:
SIHG15N80AE-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247AC

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

304mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

4.6mm

Standards/Approvals

RoHS

Width

15.5mm

Length

28.6mm

Automotive Standard

No

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 156W Maximum Power Dissipation - SIHG15N80AE-GE3


This power MOSFET is a high-voltage switching device designed for through-hole mounting in power conversion and industrial control environments. It is an N-channel enhancement type fabricated to handle elevated drain-source potentials while operating across a wide temperature span, making it suitable for demanding thermal and electrical conditions where robust high-voltage switching is required.

Features and Benefits:


• 800V drain-source withstand for high-voltage switching capability
• 13A continuous drain current for sustained load handling
• 304mΩ Rds(on) to reduce conduction losses
• 156W maximum dissipation for higher power throughput
• 35nC typical gate charge for efficient switching control
• 30V gate rating for compatibility with common driver circuits

Applications


• Suitable for industrial power converters and inverters
• Used for high-voltage motor drive stages
• Ideal for switch-mode power supplies in industrial settings
• Can be used for high-voltage testing and protection circuits
• Suitable for rugged through-hole assembly in control panels

What temperature range can it reliably operate within?


It is specified to operate from -55°C up to 150°C, suitable for harsh thermal environments.

Which package and mounting method does it use for assembly?


The device is supplied in a TO-247AC package configured for through-hole mounting.

How does its gate characteristic affect switching performance?


With a typical gate charge of 35nC the device requires moderate drive energy, balancing switching speed and driver demands.

What is the forward voltage behaviour to expect during conduction?


The forward voltage is specified at 1.2V which indicates its conduction drop in forward-biased conditions.

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