Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

RS-stocknr.:: 210-4985
Fabrikantnummer:: SIHG17N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

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Subtotaal (1 tube van 25 eenheden)*

€ 52,50

(excl. BTW)

€ 63,50

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 1.475 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
25 - 25	€ 2,10	€ 52,50
50 - 100	€ 1,974	€ 49,35
125 +	€ 1,785	€ 44,63

*prijsindicatie

RS-stocknr.:: 210-4985
Fabrikantnummer:: SIHG17N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Width	15.66mm
	Standards/Approvals	RoHS
	Length	35.3mm
	Height	4.83mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Width 15.66mm
	Standards/Approvals RoHS
	Length 35.3mm
	Height 4.83mm
	Automotive Standard No

Datasheet - SIHG17N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding power-conversion environments. It operates as an enhancement-mode N-channel device and is intended for through-hole mounting in applications requiring robust high-voltage handling and significant continuous current capability. The component meets RoHS requirements and functions across a wide ambient temperature range.

Features and Benefits:

• 800V drain-source rating enables high-voltage system operation
• 15A continuous drain current supports substantial load currents
• 250mΩ RDS(on) yields reduced conduction losses under load
• 179W maximum power dissipation allows high-power switching
• 41nC typical gate charge facilitates predictable switching behaviour
• 30V maximum gate-source tolerance protects against gate overdrive

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power electronics designs
• Used with flyback and boost converter topologies
• Can be used for industrial motor-drive switch stages
• Suitable for high-voltage laboratory and test equipment

What temperature range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, enabling use in both cold-start and elevated-heat environments.

Which package type and mounting style does it use?

The device is supplied in a TO-247AC package and is designed for through-hole PCB mounting for secure mechanical and thermal connection.

How does the forward voltage affect conduction?

The forward voltage of 1.2V indicates the on-state voltage drop under conduction conditions, which factors into thermal design and power-loss calculations.

Is it suitable for automotive qualification testing?

It is not designated as automotive standard

suitability for vehicle use should be evaluated against the required automotive specifications.