Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

RS-stocknr.:: 188-4876
Fabrikantnummer:: SIHG21N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

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€ 71,10

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€ 86,025

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Plus verzending 25 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
25 - 25	€ 2,844	€ 71,10
50 - 100	€ 2,674	€ 66,85
125 +	€ 2,417	€ 60,43

*prijsindicatie

RS-stocknr.:: 188-4876
Fabrikantnummer:: SIHG21N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	17.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	235mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Width	5.31mm
	Standards/Approvals	RoHS
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 17.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 235mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Width 5.31mm
	Standards/Approvals RoHS
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

Datasheet SIHG21N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Continuous Drain Current - SIHG21N80AE-GE3

This power MOSFET is a high-voltage, N-channel switching device designed for industrial and power-conversion environments. It operates as an enhancement-mode transistor capable of handling substantial voltages and currents while being mounted through-hole in a TO-247AC package. The device is suitable for systems that demand rugged semiconductor switching across a wide ambient temperature range.

Features and Benefits:

• 800V drain rating enables high-voltage switching capability
• 17.4A continuous drain supports significant load current
• 235mΩ Rds(on) provides reduced conduction losses
• 179W power dissipation allows high-power operation
• 48nC typical gate charge yields predictable switching energy
• 30V gate rating permits common gate-drive voltages

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for inverter and motor-drive switching stages
• Used with hard-switching topologies in power converters
• Can be used for class-D audio amplifiers requiring high voltage
• Suitable for energy and renewable power electronics

What gate-drive voltage range can I use safely?

The device accepts a maximum gate-to-source voltage of 30V, so gate-drive circuits should be designed to remain within this limit to avoid gate stress.

How does it perform across temperature extremes?

The transistor is rated to operate from -55°C up to 150°C, permitting use in elevated-temperature industrial installations with appropriate thermal management.

What mounting considerations apply for PCB design?

It is supplied in a through-hole TO-247AC package, so board layouts should include suitable hole spacing and heat-sinking provisions for the package footprint.

What switching behaviour should I expect from the gate characteristics?

With a typical total gate charge of 48nC, designers can estimate switching energy and select gate drivers that balance switching speed and EMI for their topology.