Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3

RS-stocknr.:: 225-9918
Fabrikantnummer:: SIHP5N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB SIHP5N80AE-GE3

Subtotaal (1 tube van 50 eenheden)*

€ 38,95

(excl. BTW)

€ 47,15

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

Plus verzending 1.050 stuk(s) vanaf 10 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 0,779	€ 38,95

*prijsindicatie

RS-stocknr.:: 225-9918
Fabrikantnummer:: SIHP5N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-220AB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Typical Gate Charge Qg @ Vgs	16.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	10.52mm
	Width	4.65mm
	Standards/Approvals	RoHS
	Height	15.85mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-220AB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Typical Gate Charge Qg @ Vgs 16.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 10.52mm
	Width 4.65mm
	Standards/Approvals RoHS
	Height 15.85mm
	Automotive Standard No

Datasheet - SIHP5N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHP5N80AE-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion duties in industrial environments. It operates across a wide ambient temperature range and is supplied in a TO-220AB package for conventional mounting. The device supports elevated drain-source voltage requirements while providing moderate continuous current capability and is intended for surface-mounting applications in equipment that requires RoHS-compliant components.

Features and Benefits:

• 800V drainage capability enables high-voltage switching
• 4.4A continuous current suits moderate power loads
• 1.35Ω Rds(on) minimises conduction losses under load
• 62.5W maximum dissipation supports elevated power handling
• 16.5nC typical gate charge enables faster gate transitions
• ±30V gate tolerance allows flexible drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial switch-mode power
• Used with motor drives requiring robust voltage margin
• Can be used for snubber and clamp circuits in HV systems
• Appropriate for laboratory test rigs handling high voltages

What thermal extremes can it withstand during operation?

It is rated to operate from -55°C up to 150°C, permitting use in both cold-start and high-temperature industrial conditions.

What package and mounting method does it use for PCB implementation?

It is supplied in a TO-220AB package and intended for surface-mount installation, facilitating through-hole-style heat-sinking on assemblies.

How many connection pins are provided and what is the polarity type?

The device has three pins and employs an N-channel type, with typical MOSFET pin functions for gate, drain and source.

Are there limits on gate drive voltage to avoid damage?

Gate-source voltage must not exceed 30V to prevent gate overstress during driving.