Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

RS-stocknr.:: 228-2851
Fabrikantnummer:: SiHD5N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 1.236,00

(excl. BTW)

€ 1.497,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 18 januari 2027

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,412	€ 1.236,00

*prijsindicatie

RS-stocknr.:: 228-2851
Fabrikantnummer:: SiHD5N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.35Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.35Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SiHD5N80AE-GE3

Vishay Series E Power MOSFET, 850V Maximum Drain Source Voltage, 4.4A Maximum Continuous Drain Current - SiHD5N80AE-GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification in surface-mounted power electronics. It operates across a wide temperature range and is intended for applications requiring robust blocking capability and moderate continuous current handling while occupying a TO-252 surface-mount footprint.

Features and Benefits:

• 850V drain-source rating enabling high-voltage switching
• 1.35Ω Rds(on) supports controlled conduction losses
• 4.4A continuous drain current for steady load operation
• 62.5W maximum dissipation for thermal performance headroom
• 11nC typical gate charge for faster switching transitions
• 30V gate-source limit allowing standard gate-drive ranges

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive front-ends
• Used for switch-mode power regulation stages
• Can be used for telecom and utility line-interface circuits
• Appropriate for compact surface-mount power modules

What operating temperature range can I expect for reliable operation?

The device functions from -55°C up to 150°C, permitting use in demanding thermal environments.

How should I consider gate-drive design with this component?

Design for a maximum Vgs of 30V and account for the typical 11nC gate charge when sizing drivers to meet switching speed and drive-current requirements.

What packaging and mounting considerations apply for assembly?

It is supplied in a TO-252 package intended for surface mounting, so land pattern and thermal vias should be planned to manage power dissipation.

Is this suitable for automotive-certified designs?

It is not specified to meet automotive standards, so it should be evaluated against any vehicle-specific requirements before use.