Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- RS-stocknr.:
- 349-316
- Fabrikantnummer:
- FF3MR12KM1HPHPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 675,54
(excl. BTW)
€ 817,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 675,54 |
*prijsindicatie
- RS-stocknr.:
- 349-316
- Fabrikantnummer:
- FF3MR12KM1HPHPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.59V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.59V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Automotive Standard No | ||
- Land van herkomst:
- HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.
Minimizes cooling efforts
Reduction in volume and size
Reduced system costs
Symmetrical module design
Standard construction technique
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