Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1

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€ 358,76

(excl. BTW)

€ 434,10

(incl. BTW)

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RS-stocknr.:
348-978
Fabrikantnummer:
FF6MR12W2M1HPB11BPSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

1200V

Series

CoolSiC Trench MOSFET

Package Type

EasyDUAL

Mount Type

Screw

Maximum Drain Source Resistance Rds

11.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60749, IEC 60068

Automotive Standard

No

Land van herkomst:
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is designed to deliver high performance power solutions with best-in-class packaging, featuring a compact 12 mm height for efficient space utilization. The module incorporates leading-edge Wide Bandgap (WBG) materials, providing superior efficiency, reliability, and thermal performance. With very low module stray inductance, it ensures minimized power losses and enhanced switching dynamics. The module is powered by the Enhanced CoolSiC MOSFET Gen 1, offering improved thermal management and efficiency, making it ideal for demanding power applications.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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