Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HPB76BPSA1
- RS-stocknr.:
- 348-971
- Fabrikantnummer:
- F48MR12W2M1HPB76BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 400,57
(excl. BTW)
€ 484,69
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 400,57 |
*prijsindicatie
- RS-stocknr.:
- 348-971
- Fabrikantnummer:
- F48MR12W2M1HPB76BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | CoolSiC Trench MOSFET | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 17.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series CoolSiC Trench MOSFET | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 17.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET Fourpack Module is engineered for high performance power applications, incorporating best-in-class packaging with a compact 12 mm height for efficient space utilization. It features leading edge Wide Bandgap (WBG) material, which enhances power efficiency and thermal performance. With very low module stray inductance, this module minimizes power losses and improves switching speed for more efficient operation.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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