Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

RS-stocknr.:: 284-862
Fabrikantnummer:: IMYH200R024M1HXKSA1
Fabrikant:: Infineon

Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

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RS-stocknr.:: 284-862
Fabrikantnummer:: IMYH200R024M1HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	2000V
	Package Type	PG-TO-247-4-PLUS-NT14
	Series	CoolSiC 2000 V SiC Trench MOSFET
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	576W
	Typical Gate Charge Qg @ Vgs	137nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 2000V
	Package Type PG-TO-247-4-PLUS-NT14
	Series CoolSiC 2000 V SiC Trench MOSFET
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 576W
	Typical Gate Charge Qg @ Vgs 137nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R024M1HXKSA1

Land van herkomst:: MY

Infineon CoolSiC 2000 V SiC Trench MOSFET Series MOSFET, 2000V Maximum Drain Source Voltage, 89A Maximum Continuous Drain Current - IMYH200R024M1HXKSA1

This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding power-electronic environments. It operates as an N-channel enhancement device and is supplied in a through-hole PG-TO-247-4 package that facilitates robust mounting and heat removal in industrial assemblies. The component is intended for applications requiring high blocking voltages and sustained current handling across a wide temperature range.

Features and Benefits:

• 2000V drain-source withstand for high-voltage systems
• 89A continuous drain current for heavy-load operation
• 35mΩ Rds(on) to minimise conduction losses
• 576W maximum power dissipation for thermal endurance
• 137nC typical gate charge at Vgs to inform drive sizing
• Operates from -55°C to 175°C for extended temperature margins

Applications

• Suitable for traction inverter high-voltage stages
• Ideal for utility-scale power conversion equipment
• Used with high-voltage DC-DC converter modules
• Can be used for industrial motor drives and controllers
• Suitable for solid-state circuit breaker designs

What mounting format does it require for assembly?

It is supplied in a PG-TO-247-4 through-hole package requiring a compatible heatsink and secured mounting to achieve specified power dissipation.

What gate drive limitations should be observed?

The maximum gate-to-source voltage is 20V so gate drivers must limit Vgs to that value to avoid damage.

How does the device behave thermally at high load?

The transistor can dissipate up to 576W under appropriate cooling

thermal management must be designed to maintain junction temperatures within operating limits.

Is it suitable for automotive-grade projects?

It is not specified to meet automotive standards and should not be selected where automotive qualification is required.