Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

RS-stocknr.:: 349-114
Fabrikantnummer:: IMYH200R100M1HXKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1

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RS-stocknr.:: 349-114
Fabrikantnummer:: IMYH200R100M1HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	2000V
	Series	CoolSiC
	Package Type	PG-TO-247-4-PLUS-NT14
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	142mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	55nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	217W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 2000V
	Series CoolSiC
	Package Type PG-TO-247-4-PLUS-NT14
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 142mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 55nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 217W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R100M1HXKSA1

Land van herkomst:: MY

Infineon CoolSiC Series MOSFET, 2000V Drain Source Voltage, 26A Continuous Drain Current - IMYH200R100M1HXKSA1

This MOSFET is a silicon carbide N-channel enhancement device designed for high-voltage switching in demanding electronic systems. It provides a robust solution for converting or controlling large voltages and currents in through-hole implementations, operating across an extended ambient temperature range for use in harsh environments.

Features and Benefits:

• 2000V drain-to-source withstand simplifies high-voltage designs
• 26A continuous drain current supports sustained power delivery
• 217W maximum power dissipation aids thermal margin planning
• 142 mΩ Rds(on) reduces conduction losses under load
• 55 nC typical gate charge enables manageable drive energy
• Through-hole PG-TO-247-4-PLUS-NT14 package eases mounting and cooling

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive power stages
• Used with energy storage and grid-tie interface circuits
• Can be used for high-voltage test and measurement equipment
• Appropriate for traction and heavy-duty power electronics modules

What voltage and polarity rating should designers expect for switching?

The device is rated to withstand 2000V between drain and source and is configured as an N-channel transistor, so designs must account for high-voltage clearance and appropriate gate-drive referencing.

How does gate-drive energy influence gate driver selection?

With a typical gate charge of 55 nC, gate drivers should be chosen to supply sufficient peak current to achieve the required switching speed while controlling dv/dt to limit electromagnetic stress.

What thermal considerations are necessary for reliable operation?

The component dissipates up to 217W under specified conditions, so thermal management including heatsinking and PCB thermal conductance must be engineered to maintain junction temperatures within limits.

Which mounting approach does the package support and what are the implications?

The PG-TO-247-4-PLUS-NT14 through-hole format facilitates mechanical stability and direct heatsink attachment, simplifying assembly for high-power applications.