Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1

RS-stocknr.:: 349-113
Fabrikantnummer:: IMYH200R075M1HXKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1

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RS-stocknr.:: 349-113
Fabrikantnummer:: IMYH200R075M1HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	2000V
	Package Type	PG-TO-247-4-PLUS-NT14
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	106mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	267W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	64nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 2000V
	Package Type PG-TO-247-4-PLUS-NT14
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 106mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 267W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 64nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R075M1HXKSA1

Land van herkomst:: MY

Infineon CoolSiC Series MOSFET, 34A Maximum Continuous Drain Current, 2000V Maximum Drain Source Voltage - IMYH200R075M1HXKSA1

This MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding industrial and power-conversion environments. It operates across an extended temperature span and is housed in a multi-lead through-hole package suited to robust assembly and heat management. The device is intended for applications requiring substantial continuous current handling and elevated power dissipation.

Features and Benefits:

• 2000V drain capability enabling very high-voltage switching
• 34A continuous drain current for sustained power delivery
• 267W maximum power dissipation aiding thermal design headroom
• 106mΩ Rds(on) reducing conduction losses in high-current paths
• 64nC typical gate charge for predictable switching energy
• Through-hole PG-TO-247-4-PLUS-NT14 simplifies heatsinking integration

Applications

• Suitable for high-voltage converters and inverters
• Ideal for industrial motor drive power stages
• Used for high-power switch-mode power supplies
• Can be used for renewable-energy power electronics
• Suitable for traction and heavy-duty power modules

What gate voltage limits must designers respect when driving it?

The gate-source rating is ±20V, so gate-drive circuitry should limit excursions within this range to prevent gate-oxide stress.

How does the device cope with harsh thermal environments?

It is specified to function from -55°C up to 175°C, allowing designs to tolerate wide ambient and junction temperature swings.

What pin configuration and mounting approach does it use?

The component comes in a four-lead PG-TO-247-4-PLUS-NT14 through-hole package, enabling secure PCB mounting and direct attachment to heatsinks.

Are there material or environmental restrictions for use?

It is RoHS-compliant, so it conforms to lead-free material requirements for electronic assemblies.