Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1

RS-stocknr.:: 349-372
Fabrikantnummer:: AIMZH120R010M1TXKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1

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RS-stocknr.:: 349-372
Fabrikantnummer:: AIMZH120R010M1TXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	202A
	Maximum Drain Source Voltage Vds	1200V
	Series	CoolSiC
	Package Type	PG-TO-247-4-STD-NT6.7
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	11.3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	178nC
	Maximum Power Dissipation Pd	750W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q100, AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 202A
	Maximum Drain Source Voltage Vds 1200V
	Series CoolSiC
	Package Type PG-TO-247-4-STD-NT6.7
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 11.3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 178nC
	Maximum Power Dissipation Pd 750W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q100, AEC-Q101

Datasheet - AIMZH120R010M1TXKSA1

Land van herkomst:: CN

Infineon CoolSiC Series MOSFET, 1200V Drain Source Voltage, 202A Continuous Drain Current - AIMZH120R010M1TXKSA1

This n-channel enhancement MOSFET is a silicon carbide power transistor designed for high-voltage switching in demanding electronic systems. It is intended for applications requiring robust thermal performance and elevated voltage capability while supporting conventional through‑hole mounting in a PG-TO-247-4 package.

Features and Benefits:

• 1200V drain rating enabling high-voltage circuit operation
• 202A continuous drain current supporting heavy current loads
• 11.3 mΩ low Rds(on) reducing conduction losses
• 750W power dissipation allowing sustained high-power use
• 178 nC gate charge facilitating controlled switching dynamics
• -55 to 175 °C operating range for extreme temperature endurance

Applications

• Suitable for high-voltage power converters in industrial systems
• Ideal for traction inverter stages requiring high current
• Used with automotive-grade electronics conforming to AEC‑Q101
• Can be used for renewable energy inverter modules
• Suitable for power supplies in harsh thermal environments

How does the device cope with automotive qualification requirements?

It meets recognised automotive stress test standards to address reliability needs in vehicle electronics.

What mounting method should designers plan for?

The component uses a through‑hole PG-TO-247-4 package for secure board attachment and heat-sink compatibility.

How will gate drive design be affected by switching behaviour?

Designers should account for a typical gate charge of 178 nC when sizing gate drivers to achieve desired switching speeds and minimise losses.

What polarity and conduction mode does it employ?

It operates as an N-channel device in enhancement mode, conducting when a positive gate-source voltage is applied.