Infineon CoolSiC Type N-Channel MOSFET, 5.4 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1

RS-stocknr.:: 349-108
Fabrikantnummer:: IMWH170R1K0M1XKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 5.4 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1

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€ 14,52

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Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 6,00	€ 12,00
20 - 198	€ 5,40	€ 10,80
200 - 998	€ 4,98	€ 9,96
1000 - 1998	€ 4,615	€ 9,23
2000 +	€ 4,135	€ 8,27

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RS-stocknr.:: 349-108
Fabrikantnummer:: IMWH170R1K0M1XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	1700V
	Package Type	PG-TO-247-3-STD-NN4.8
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	70W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	5.5nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 1700V
	Package Type PG-TO-247-3-STD-NN4.8
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 70W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 5.5nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMWH170R1K0M1XKSA1

Land van herkomst:: CN

Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 5.4A Continuous Drain Current - IMWH170R1K0M1XKSA1

This MOSFET is a silicon carbide N-channel enhancement device designed for high-voltage power switching in demanding electronic systems. It operates across a wide temperature span and mounts via through-hole to provide robust thermal contact and straightforward assembly in power modules and discrete boards.

Features and Benefits:

• 1700V maximum drain-source voltage enables high-voltage switching
• 5.4A continuous drain current supports moderate power loads
• 70W maximum power dissipation manages substantial thermal stress
• 880 mΩ drain-source resistance reduces conduction losses
• 5.5 nC typical gate charge allows fast gate transitions
• 15V gate-source limit protects gate-drive circuitry

Applications

• Suitable for high-voltage power converters
• Ideal for industrial motor-drive front-ends
• Used with battery management in high-voltage systems
• Can be used for renewable-energy inverter stages
• Suitable for laboratory power supplies and test rigs

What mounting method does it require for installations?

It uses a through-hole package which is compatible with hand soldering and wave-solder assembly and offers solid mechanical anchoring for heatsinking arrangements.

How does the device cope with elevated ambient temperatures?

The component is specified to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation and permitting designs with conservative derating for lifetime.

What electrical polarity and control mode should designers expect?

It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive relative to the source to switch on.

Are there any regulatory material restrictions relevant to procurement?

The part is manufactured to be RoHS-compliant, meeting restrictions on certain hazardous substances for electronic components.