Infineon CoolSiC Type N-Channel MOSFET, 10 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R450M1XKSA1
- RS-stocknr.:
- 349-109
- Fabrikantnummer:
- IMWH170R450M1XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 8,42
(excl. BTW)
€ 10,19
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 8,42 |
| 10 - 99 | € 7,58 |
| 100 - 499 | € 7,00 |
| 500 - 999 | € 6,48 |
| 1000 + | € 5,82 |
*prijsindicatie
- RS-stocknr.:
- 349-109
- Fabrikantnummer:
- IMWH170R450M1XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 111W | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series CoolSiC | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 111W | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 10A Continuous Drain Current - IMWH170R450M1XKSA1
This MOSFET is a silicon‑carbide power transistor designed for high‑voltage switching in demanding electronic systems. It operates as an N‑channel enhancement device in a through‑hole PG‑TO‑247 3‑pin package, enabling straightforward mounting and thermal management for power stages. The device suits environments requiring wide temperature tolerance and RoHS‑compliant construction.
Features and Benefits:
• 1700V drain‑source rating enables high‑voltage switching capability
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
• 10A continuous drain current supports sustained power flow
• 111W maximum power dissipation improves heat handling in applications
• 390 mΩ Rds(on) reduces conduction losses under load
• 11.7 nC typical gate charge enables predictable switching energy
• ±15V gate‑source withstand simplifies drive voltage design
Applications
• Suitable for high‑voltage converter topologies in power supplies
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
• Ideal for switch‑mode power systems in industrial equipment
• Used with power inverters requiring high breakdown voltage
• Can be used for hard‑switching stages in motor drive electronics
• Useful for lab prototyping where through‑hole mounting is preferred
What temperature range can it tolerate in operation?
It operates across a wide span from -55 °C up to 175 °C, accommodating harsh thermal conditions.
How many pins and what mounting style does it use?
The component has three pins and a through‑hole mount in a PG‑TO‑247 3‑pin package for PCB fastening.
What compliance or approvals apply to this device?
It conforms to RoHS requirements for restricted substances.
What gate voltage limits should be observed during design?
The gate‑to‑source voltage must not exceed ±15V (15V in magnitude) to avoid device stress.
Gerelateerde Links
- Infineon CoolSiC Type N-Channel MOSFET, 5.4 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 7.5 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1
- Infineon IKWH40N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH100N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH50N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH75N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon CoolSiC Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R160M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1
