Infineon IKWH40N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole

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Verpakkingsopties
RS-stocknr.:
285-010
Fabrikantnummer:
IKWH40N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

208W

Package Type

PG-TO-247-3-STD-NN4.8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Height

5.1mm

Standards/Approvals

No

Length

20.1mm

Width

15.9 mm

Automotive Standard

No

The Infineon IGBT is a cutting edge IGBT module, utilising TRENCHSTOP IGBT7 technology for exceptional performance in high speed applications with low saturation voltage. Designed with a collector emitter voltage rating of 650 V, this module ensures enhanced efficiency and minimal energy loss, making it Ideal for demanding industrial environments. With its robust package and optimised thermal properties, this module offers outstanding robustness against humidity, ensuring consistent operation across various conditions.

High speed operation for efficient energy management

Low collector emitter saturation voltage boosts performance

Soft recovery diode ensures gentle switching

Humidity resistant design for reliability in diverse conditions

Optimized for two and three level topologies

Comprehensive product spectrum for tailored solutions

Qualified for industrial applications per rigorous JEDEC standards

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