Infineon CoolSiC Type N-Channel MOSFET, 70 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U02 IMZA120R030M1HXKSA1
- RS-stocknr.:
- 349-115
- Fabrikantnummer:
- IMZA120R030M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 21,94
(excl. BTW)
€ 26,55
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 240 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 21,94 |
| 10 - 99 | € 19,76 |
| 100 + | € 18,21 |
*prijsindicatie
- RS-stocknr.:
- 349-115
- Fabrikantnummer:
- IMZA120R030M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO-247-4-U02 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 273W | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO-247-4-U02 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 273W | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Infineon CoolSiC SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold free on state characteristic.
Best in class switching and conduction losses
Wide gate source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn off switching losses
Gerelateerde Links
- Infineon CoolSiC Type N-Channel MOSFET, 31 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R080M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R160M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R020M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 22 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R120M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 69 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R030M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 38 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R060M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 202 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R010M1TXKSA1