Infineon CoolSiC Type N-Channel MOSFET, 48 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R050M1HXKSA1

RS-stocknr.:: 349-111
Fabrikantnummer:: IMYH200R050M1HXKSA1
Fabrikant:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 48 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R050M1HXKSA1

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RS-stocknr.:: 349-111
Fabrikantnummer:: IMYH200R050M1HXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	2000V
	Series	CoolSiC
	Package Type	PG-TO-247-4-PLUS-NT14
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	82nC
	Maximum Power Dissipation Pd	348W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 2000V
	Series CoolSiC
	Package Type PG-TO-247-4-PLUS-NT14
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 82nC
	Maximum Power Dissipation Pd 348W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R050M1HXKSA1

Land van herkomst:: MY

Infineon CoolSiC Series MOSFET, 2000V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IMYH200R050M1HXKSA1

This MOSFET is a silicon-carbide power transistor designed for high-voltage switching in demanding electrical systems. It operates as an N-channel enhancement device intended for through-hole board mounting and is suited to applications requiring high-temperature tolerance and substantial continuous current handling.

Features and Benefits:

• 2000V drain voltage enables high-voltage switching capability
• 48A continuous drain current supports heavy load operation
• 70mΩ Rds(on) minimises conduction losses during switching
• 82nC typical gate charge allows predictable gate-drive design
• 348W maximum power dissipation manages significant thermal loads
• Through-hole PG-TO-247-4-PLUS-NT14 package simplifies heat-sinking

Applications

• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive power stages
• Used with high-voltage capacitor charging circuits
• Can be used for DC-DC conversion in utility equipment
• Suitable for laboratory power electronics evaluation boards

What gate-drive limits must I observe for safe operation?

The gate-source voltage must not exceed 20V

design gate drivers to stay within this threshold including transient suppression.

How does it behave under elevated temperatures?

It is rated to function up to 175°C junction temperature

thermal management should account for the specified maximum power dissipation to prevent thermal runaway.

What mounting considerations are required for thermal control?

The four-pin PG-TO-247-4-PLUS-NT14 through-hole package permits robust mechanical fixation and direct interfacing to a heatsink for efficient heat removal.

Are there constraints on ambient operating range?

The device is specified down to -55°C minimum operating temperature, so designs must accommodate this lower bound for cold-start scenarios.