Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 60 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS-stocknr.:
- 284-861
- Fabrikantnummer:
- IMYH200R012M1HXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 102,56
(excl. BTW)
€ 124,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 102,56 |
*prijsindicatie
- RS-stocknr.:
- 284-861
- Fabrikantnummer:
- IMYH200R012M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging Advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it Ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its Advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.
Delivers low switching losses for efficiency
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V
Gerelateerde Links
- Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 60 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 48 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R050M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET, 34 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R075M1HXKSA1
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
- Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HPB76BPSA1
- Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1