Infineon CoolSiCTM Trench MOSFET N-Channel MOSFET, 200 A, 1.2 kV Enhancement EasyDUAL FF4MR12W2M1HPB11BPSA1
- RS-stocknr.:
- 349-253
- Fabrikantnummer:
- FF4MR12W2M1HPB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 211,28
(excl. BTW)
€ 255,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 14 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 211,28 |
*prijsindicatie
- RS-stocknr.:
- 349-253
- Fabrikantnummer:
- FF4MR12W2M1HPB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | CoolSiCTM Trench MOSFET | |
| Package Type | EasyDUAL | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 8.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60068, IEC 60747, IEC 60749 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series CoolSiCTM Trench MOSFET | ||
Package Type EasyDUAL | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 8.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23V | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60068, IEC 60747, IEC 60749 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET half bridge module is a 1200 V module featuring a low 4 mΩ gate resistance G1 and is equipped with an integrated NTC temperature sensor for precise thermal monitoring. It also includes pre applied thermal interface material for enhanced heat dissipation and utilizes PressFIT Contact Technology, ensuring reliable and efficient electrical connections. This module is designed for high performance applications where efficient power conversion and thermal management are critical.
Rugged mounting due to integrated mounting clamps
PressFIT contact technology
Integrated NTC temperature sensor
Pre applied thermal interface material
Gerelateerde Links
- Infineon CoolSiC Trench MOSFET N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1
- Infineon EasyDUAL N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon CoolSiC Trench MOSFET N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HPB76BPSA1
- Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- Infineon N-Channel MOSFET, 185 A, 1200 V Enhancement FF3MR12KM1HHPSA1
- Infineon N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ
- Infineon CoolSiC 2000 V SiC Trench MOSFET N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
