Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 60 A, 1200 V Enhancement F411MR12W2M1HPB76BPSA1

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€ 318,82

(excl. BTW)

€ 385,77

(incl. BTW)

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RS-stocknr.:
349-250
Fabrikantnummer:
F411MR12W2M1HPB76BPSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

F4-11MR12W2M1H_B70

Mount Type

Screw

Maximum Drain Source Resistance Rds

23.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

60749, IEC 60747, 60068

Automotive Standard

No

Land van herkomst:
DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, ensuring optimal performance while saving space. It utilizes leading-edge Wide Bandgap materials, enhancing power efficiency and thermal management. The design boasts very low module stray inductance, reducing power losses and improving switching speed.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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