Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 25 A, 1200 V Enhancement EasyPACK F433MR12W1M1HB76BPSA1
- RS-stocknr.:
- 348-968
- Fabrikantnummer:
- F433MR12W1M1HB76BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 124,40
(excl. BTW)
€ 150,52
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 124,40 |
*prijsindicatie
- RS-stocknr.:
- 348-968
- Fabrikantnummer:
- F433MR12W1M1HB76BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | F4-17MR12W1M1HP_B76 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 69.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60068, IEC 60747, IEC 60749 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series F4-17MR12W1M1HP_B76 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 69.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60068, IEC 60747, IEC 60749 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 33 mΩ G1 with NTC and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, enabling efficient space utilization without compromising performance. It incorporates leading-edge Wide Bandgap (WBG) materials, ensuring improved efficiency and enhanced power handling capabilities. The design also boasts very low module stray inductance, which reduces power loss and optimizes switching performance.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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