Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK F411MR12W2M1HB70BPSA1
- RS-stocknr.:
- 349-249
- Fabrikantnummer:
- F411MR12W2M1HB70BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 358,68
(excl. BTW)
€ 434,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 358,68 |
*prijsindicatie
- RS-stocknr.:
- 349-249
- Fabrikantnummer:
- F411MR12W2M1HB70BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | F4-11MR12W2M1H_B70 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 20.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60068, IEC 60749, IEC 60747 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series F4-11MR12W2M1H_B70 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 20.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60068, IEC 60749, IEC 60747 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. The MOSFET is designed with best in class packaging featuring a compact 12.25 mm height, optimizing space while maintaining exceptional performance. It incorporates leading edge Wide Bandgap materials, offering superior efficiency and reliability in demanding applications. The module is engineered with very low stray inductance, minimizing power losses and improving overall switching performance.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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