Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1
- RS-stocknr.:
- 348-976
- Fabrikantnummer:
- FF11MR12W2M1HPB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 194,59
(excl. BTW)
€ 235,45
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 194,59 |
*prijsindicatie
- RS-stocknr.:
- 348-976
- Fabrikantnummer:
- FF11MR12W2M1HPB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | FF11MR12W2M1HP_B11 | |
| Package Type | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 23.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series FF11MR12W2M1HP_B11 | ||
Package Type EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 23.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is engineered for high performance power applications, offering a best-in-class package with a compact 12 mm height. It leverages leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency and thermal performance. The module is designed with very low stray inductance, which minimizes power losses and improves switching speed.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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