Infineon EasyPACK Type N-Channel MOSFET, 65 A, 1200 V Enhancement Tray F3L11MR12W2M1HPB19BPSA1
- RS-stocknr.:
- 349-248
- Fabrikantnummer:
- F3L11MR12W2M1HPB19BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 317,12
(excl. BTW)
€ 383,72
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 317,12 |
*prijsindicatie
- RS-stocknr.:
- 349-248
- Fabrikantnummer:
- F3L11MR12W2M1HPB19BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tray | |
| Series | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, RoHS, IEC 60749 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tray | ||
Series EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, RoHS, IEC 60749 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET 3 level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre applied thermal interface material and PressFIT contact technology. The MOSFET features best in class packaging with a compact height of just 12 mm, designed for optimal performance in power electronics. It utilizes leading edge Wide Bandgap materials, enhancing its efficiency and reliability. The design incorporates very low module stray inductance, ensuring minimal power loss and improved switching behaviour.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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