Infineon FS13MR12W2M1H_C55 N-Channel MOSFET, 62.5 A, 1.2 kV Enhancement EasyPACK FS13MR12W2M1HC55BPSA1
- RS-stocknr.:
- 348-979
- Fabrikantnummer:
- FS13MR12W2M1HC55BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 166,67
(excl. BTW)
€ 201,67
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 166,67 |
*prijsindicatie
- RS-stocknr.:
- 348-979
- Fabrikantnummer:
- FS13MR12W2M1HC55BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62.5A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | EasyPACK | |
| Series | FS13MR12W2M1H_C55 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 21.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62.5A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type EasyPACK | ||
Series FS13MR12W2M1H_C55 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 21.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET 1200 V, 13 mΩ Six-Pack Module integrates CoolSiC MOSFET Enhanced Generation 1 technology for high performance power applications. Housed in a best-in-class package with a compact 12 mm height, it delivers optimal space efficiency without sacrificing performance. The module is built with leading-edge Wide Bandgap (WBG) materials, ensuring superior efficiency, thermal performance, and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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