Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2

RS-stocknr.:: 753-2832
Fabrikantnummer:: BSS127H6327XTSA2
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2

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Subtotaal (1 verpakking van 25 eenheden)*

€ 7,175

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€ 8,675

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 25 januari 2027

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Aantal stuks	Per stuk	Per verpakking*
25 - 225	€ 0,287	€ 7,18
250 - 600	€ 0,198	€ 4,95
625 - 1225	€ 0,184	€ 4,60
1250 - 2475	€ 0,172	€ 4,30
2500 +	€ 0,129	€ 3,23

*prijsindicatie

RS-stocknr.:: 753-2832
Fabrikantnummer:: BSS127H6327XTSA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Series	SIPMOS
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.82V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.65nC
	Maximum Power Dissipation Pd	500mW
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1mm
	Width	1.3mm
	Length	2.9mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Series SIPMOS
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.82V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.65nC
	Maximum Power Dissipation Pd 500mW
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1mm
	Width 1.3mm
	Length 2.9mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Drain Source Voltage, 21mA Continuous Drain Current - BSS127H6327XTSA2

This MOSFET is a high-voltage N-channel transistor designed for surface-mount switching in compact electronic systems. It operates across a wide temperature range for demanding environments and is suitable for applications requiring a rugged, small-footprint device with controlled gate-drive characteristics.

Features and Benefits:

• 600V drain-to-source withstand delivers high-voltage switching capability
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages

Applications

• Suitable for high-voltage power-conversion topologies
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules

What package and mounting style does it use for PCB assembly?

It is supplied in a SOT-23 package intended for surface-mount placement and reflow soldering.

What thermal extremes can it withstand during operation?

The device is specified to operate between -55 °C and 150 °C, supporting wide thermal excursions in harsh environments.

How many electrical connections are available for circuit integration?

The component uses a three-pin configuration compatible with typical discrete MOSFET layouts.

Is the device qualified for automotive applications?

It meets the AEC-Q101 standard, indicating suitability for automotive electronic use.