Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 826-9285
Fabrikantnummer:: BSS138NH6433XTMA1
Fabrikant:: Infineon

Infineon SIPMOS N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23

Subtotaal (1 rol van 500 eenheden)*

€ 33,50

(excl. BTW)

€ 40,50

(incl. BTW)

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Verzending 169.500 stuk(s) vanaf 19 oktober 2026

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Aantal stuks	Per stuk	Per rol*
500 +	€ 0,067	€ 33,50

*prijsindicatie

RS-stocknr.:: 826-9285
Fabrikantnummer:: BSS138NH6433XTMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	360mW
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	830mV
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Height	1mm
	Width	1.3mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 360mW
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 830mV
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Height 1mm
	Width 1.3mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1

This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.

Features and Benefits:

• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages

Applications

• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs

What mounting style is required for this component?

It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.

How does it cope with elevated operating temperatures?

The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.

What gate drive considerations should be observed?

Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.

Is this device suitable for high-current power stages?

It is intended for small-signal and low-current switching

the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.