Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 165-7534
Fabrikantnummer:: BSS127H6327XTSA2
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 rol van 3000 eenheden)*

€ 273,00

(excl. BTW)

€ 330,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 01 januari 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 - 3000	€ 0,091	€ 273,00
6000 - 12000	€ 0,087	€ 261,00
15000 +	€ 0,081	€ 243,00

*prijsindicatie

RS-stocknr.:: 165-7534
Fabrikantnummer:: BSS127H6327XTSA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	600Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	0.65nC
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	0.82V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 600Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 0.65nC
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf 0.82V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Drain Source Voltage, 21mA Continuous Drain Current - BSS127H6327XTSA2

This MOSFET is a high-voltage N-channel transistor designed for surface-mount switching in compact electronic systems. It operates across a wide temperature range for demanding environments and is suitable for applications requiring a rugged, small-footprint device with controlled gate-drive characteristics.

Features and Benefits:

• 600V drain-to-source withstand delivers high-voltage switching capability
• 0.65 nC typical gate charge enables faster, lower-loss switching
• 600 Ω maximum RDS(on) reduces off-state leakage in high-voltage circuits
• 21 mA continuous drain current suits low-current control functions
• 500 mW maximum power dissipation manages thermal loading in compact layouts
• VGS rated to 20V allows compatibility with common gate-drive voltages

Applications

• Suitable for high-voltage power-conversion topologies
• Ideal for automotive-grade sensor and auxiliary circuits
• Used with compact switching regulators and flyback stages
• Can be used for gate-level signal translation in protection circuits
• Suitable for small-form-factor power-management modules

What package and mounting style does it use for PCB assembly?

It is supplied in a SOT-23 package intended for surface-mount placement and reflow soldering.

What thermal extremes can it withstand during operation?

The device is specified to operate between -55 °C and 150 °C, supporting wide thermal excursions in harsh environments.

How many electrical connections are available for circuit integration?

The component uses a three-pin configuration compatible with typical discrete MOSFET layouts.

Is the device qualified for automotive applications?

It meets the AEC-Q101 standard, indicating suitability for automotive electronic use.