Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

RS-stocknr.:: 753-2838
Artikelnummer Distrelec:: 304-45-303
Fabrikantnummer:: BSS126H6327XTSA2
Fabrikant:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

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€ 18,25

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RS-stocknr.:: 753-2838
Artikelnummer Distrelec:: 304-45-303
Fabrikantnummer:: BSS126H6327XTSA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21mA
	Maximum Drain Source Voltage Vds	600V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Typical Gate Charge Qg @ Vgs	1.4nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Height	1mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21mA
	Maximum Drain Source Voltage Vds 600V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Typical Gate Charge Qg @ Vgs 1.4nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Height 1mm
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2

This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads

Applications

• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies

What package type is used for compact PCB mounting?

It is supplied in a small SOT-23 surface-mount package for dense board layouts.

How does it perform across temperature extremes?

The device is specified to operate from -55°C up to 150°C for broad environmental ranges.

What is the diode forward characteristic for reverse conduction considerations?

The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.

What pin configuration and count should I expect when designing footprints?

The device utilises three pins, consistent with single-transistor SOT-23 layouts.