Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 145-8801
Fabrikantnummer:: BSS83PH6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 rol van 3000 eenheden)*

€ 165,00

(excl. BTW)

€ 201,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

33.000 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 - 3000	€ 0,055	€ 165,00
6000 - 12000	€ 0,052	€ 156,00
15000 +	€ 0,049	€ 147,00

*prijsindicatie

RS-stocknr.:: 145-8801
Fabrikantnummer:: BSS83PH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	330mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Forward Voltage Vf	-1.1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2.38nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 330mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Forward Voltage Vf -1.1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2.38nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3Ω Maximum Drain Source Resistance - BSS83PH6327XTSA1

This p-channel MOSFET is a surface-mount switching transistor designed for compact power-control roles in electronic assemblies. It operates as an enhancement-mode device suitable for low-current switching in systems that demand a wide operating temperature range and compatibility with automotive-grade requirements.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching applications
• 3Ω maximum Rds reduces conduction losses during on-state
• 330mA continuous drain current supports small-signal switching
• 2.38nC typical gate charge yields faster gate transitions
• 20V maximum gate-source voltage allows flexible gate drive levels
• AEC-Q101 qualification ensures suitability for automotive electronics

Applications

• Suitable for battery-management and load-disconnect circuits
• Ideal for signal switching in automotive sensor interfaces
• Used with low-power regulator and power-rail switching stages
• Can be used for polarity-reverse protection in compact devices
• Suitable for surface-mount prototypes and dense PCB layouts

What thermal extremes can the device tolerate in real-world use?

It is specified to operate from -55°C up to 150°C, enabling use in both cold-start and high-temperature environments without derating of basic functionality.

How does the package influence board-level assembly and layout?

The SOT-23 surface-mount package is compact and suited to automated placement, permitting tight component spacing and simplified thermal conduction to the PCB.

What power dissipation should designers expect under normal conditions?

The device has a maximum power dissipation of 360mW, which should be accounted for in thermal calculations and thermal pad design to prevent overheating.

How does the component’s gate charge affect switching performance?

A typical gate charge of 2.38nC minimises required gate-drive energy, improving switching speed and reducing driver current for low-frequency or pulse applications.